N-channel power MOSFET featuring 40V drain-source breakdown voltage and 110A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 5.3mΩ drain-source resistance. Designed for surface mounting in a TO-263-3 package, it boasts a maximum power dissipation of 150W and operates across a wide temperature range of -55°C to 175°C. Key switching characteristics include a 20ns turn-on delay and 12ns fall time.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power150W
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Technical Specifications
Vishay SUM110N04-05H-E3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
110A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
5.3mR
Drain to Source Voltage (Vdss)
40V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
0.19inch
Input Capacitance
6.7nF
Length
0.41inch
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
150W
Rds On Max
5.3mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
50ns
Turn-On Delay Time
20ns
Width
0.38inch
Compliance
RoHS
Compliant
Datasheet
Vishay SUM110N04-05H-E3 Datasheet
Download the complete datasheet for Vishay SUM110N04-05H-E3 to view detailed technical specifications.
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