N-channel MOSFET with 60V drain-source voltage and 110A continuous drain current. Features 3.4mR drain-source on-resistance and 375W max power dissipation. Packaged in a TO-263-3 surface-mount D2PAK case, this component offers fast switching with turn-on delay of 22ns and fall time of 280ns. Operating temperature range is -55°C to 150°C, with RoHS compliance.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power3.7W
Quick Jump:
Technical Specifications
Vishay SUM110N06-3M4L-E3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
110A
Drain to Source Resistance
3.4mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
3.4mR
Fall Time
280ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
12.9nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
375W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.7W
Radiation Hardening
No
Rds On Max
3.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
110ns
Turn-On Delay Time
22ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUM110N06-3M4L-E3 Datasheet
Download the complete datasheet for Vishay SUM110N06-3M4L-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.