N-channel Power MOSFET, 20V Vds, 60A continuous drain current, and 3.9mΩ maximum drain-source on-resistance. Features a TO-263 surface-mount package with a maximum power dissipation of 120W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 15ns and fall time of 8ns. RoHS compliant and lead-free.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SUM60N02-3M9P-E3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
60A
Drain to Source Resistance
3.9mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
3.9mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
5.95nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
120W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3.9mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
35ns
Turn-On Delay Time
15ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUM60N02-3M9P-E3 Datasheet
Download the complete datasheet for Vishay SUM60N02-3M9P-E3 to view detailed technical specifications.
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