N-channel power MOSFET with 200V drain-source voltage and 65A continuous drain current. Features 30mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 4V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 3.75W. Packaged in a TO-263 surface-mount case, this RoHS compliant component offers fast switching speeds with turn-on delay of 24ns and fall time of 200ns.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Vishay SUM65N20-30-E3 technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
65A
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
30mR
Dual Supply Voltage
200V
Fall Time
200ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
5.1nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.75W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.75W
Radiation Hardening
No
Rds On Max
30mR
Reach SVHC Compliant
No
Reverse Recovery Time
130ns
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
24ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUM65N20-30-E3 Datasheet
Download the complete datasheet for Vishay SUM65N20-30-E3 to view detailed technical specifications.
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