N-channel power MOSFET with 150V drain-source voltage and 85A continuous drain current. Features low 19mΩ drain-source on-resistance and 4.75nF input capacitance. Packaged in a TO-263-3 surface-mount case, this component offers fast switching with turn-on delay of 22ns and fall time of 170ns. Operates from -55°C to 175°C with 3.75W maximum power dissipation. RoHS compliant and lead-free.
PackageTO-263-3
Voltage150V
Current85A
MountingSurface Mount
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Technical Specifications
Vishay SUM85N15-19-E3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
85A
Current
85A
Drain to Source Resistance
19mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
19mR
Dual Supply Voltage
150V
Fall Time
170ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
4.75nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.75W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
19mR
Reach SVHC Compliant
Unknown
Reverse Recovery Time
130ns
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
40ns
Turn-On Delay Time
22ns
Voltage
150V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUM85N15-19-E3 Datasheet
Download the complete datasheet for Vishay SUM85N15-19-E3 to view detailed technical specifications.
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