N-channel power MOSFET with 30V drain-source voltage and 33A continuous drain current. Features low 2.2mΩ drain-source on-resistance and 250W maximum power dissipation. Operates from -55°C to 175°C, packaged in a surface-mount TO-263-3 with 3 pins. RoHS compliant and lead-free.
Vishay SUM90N03-2M2P-E3 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Resistance | 2.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.2mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 12.065nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.2mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 55ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SUM90N03-2M2P-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.