N-channel power MOSFET, surface mountable in a TO-263-3 package. Features 60V drain-source breakdown voltage and a low 4.4mΩ drain-source on-resistance. Supports continuous drain current up to 90A with a maximum power dissipation of 300W. Operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with an 8ns fall time. RoHS compliant and lead-free.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Vishay SUM90N06-4M4P-E3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
4.4mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
4.4mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.19nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.75W
Radiation Hardening
No
Rds On Max
4.4mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
36ns
Turn-On Delay Time
23ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUM90N06-4M4P-E3 Datasheet
Download the complete datasheet for Vishay SUM90N06-4M4P-E3 to view detailed technical specifications.
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