N-Channel Power MOSFET, 150V Drain-Source Voltage, 18A Continuous Drain Current, and 95mΩ Drain-Source Resistance. Features include 8ns turn-on delay, 17ns turn-off delay, and 30ns fall time. This silicon Metal-Oxide Semiconductor FET is housed in a TO-220AB package, suitable for through-hole mounting. Operating temperature range is -55°C to 175°C with a maximum power dissipation of 88W. RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SUP18N15-95-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
18A
Drain to Source Resistance
95mR
Drain to Source Voltage (Vdss)
150V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
900pF
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
95mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
17ns
Turn-On Delay Time
8ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUP18N15-95-E3 Datasheet
Download the complete datasheet for Vishay SUP18N15-95-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.