Vishay
SUP25P10-138-GE3
VISHAY SUP25P10-138-GE3 MOSFET Transistor, P Channel, -16.3 A, -100 V, 0.115 ohm, -10 V
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay SUP25P10-138-GE3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
16.3A
Drain to Source Resistance
138mR
Drain to Source Voltage (Vdss)
-100V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.1nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
73.5W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Rds On Max
13.8mR
Reach SVHC Compliant
No
RoHS Compliant
No
Series
TrenchFET®
Weight
0.211644oz
Compliance
RoHS
Not Compliant
Datasheet
Vishay SUP25P10-138-GE3 Datasheet
Download the complete datasheet for Vishay SUP25P10-138-GE3 to view detailed technical specifications.
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