Vishay
SUP33N20-60P-E3
VISHAY SUP33N20-60P-E3 MOSFET Transistor, N Channel, 33 A, 200 V, 60 mohm, 15 V, 4.5 V
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power3.12W
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Technical Specifications
Vishay SUP33N20-60P-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
33A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
200V
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.12W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
3.12W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4.5V
Turn-Off Delay Time
26ns
Turn-On Delay Time
16ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUP33N20-60P-E3 Datasheet
Download the complete datasheet for Vishay SUP33N20-60P-E3 to view detailed technical specifications.
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