N-channel Power MOSFET featuring 100V drain-source breakdown voltage and 40A continuous drain current. This through-hole component offers a low 30mΩ drain-source on-resistance and a maximum power dissipation of 107W. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching speeds with turn-on delay of 11ns and fall time of 12ns. Packaged in a TO-220-3 case, this RoHS compliant device is ideal for demanding power applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Vishay SUP40N10-30-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
30mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.4nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
107W
Mount
Through Hole
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
3.75W
Radiation Hardening
No
Rds On Max
30mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
30ns
Turn-On Delay Time
11ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUP40N10-30-E3 Datasheet
Download the complete datasheet for Vishay SUP40N10-30-E3 to view detailed technical specifications.
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