The SUP40N10-30-GE3 is a 100V power MOSFET with a continuous drain current of 38.5A. It features a TO-220AB package and is mounted through a hole. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 89W. It is not RoHS compliant and is not radiation hardened.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Vishay SUP40N10-30-GE3 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 38.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Through Hole |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| RoHS Compliant | No |
| Series | TrenchFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay SUP40N10-30-GE3 Datasheet
Download the complete datasheet for Vishay SUP40N10-30-GE3 to view detailed technical specifications.
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