N-channel power MOSFET featuring 250V drain-to-source breakdown voltage and 40A continuous drain current. Offers low 60mΩ drain-to-source resistance and 300W power dissipation. Designed for through-hole mounting in a TO-220-3 package, with operating temperatures from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 22ns and fall time of 145ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Vishay SUP40N25-60-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
250V
Fall Time
145ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Input Capacitance
5nF
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.75W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
60mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
40ns
Turn-On Delay Time
22ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUP40N25-60-E3 Datasheet
Download the complete datasheet for Vishay SUP40N25-60-E3 to view detailed technical specifications.
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