
N-channel power MOSFET featuring 250V drain-to-source breakdown voltage and 40A continuous drain current. Offers low 60mΩ drain-to-source resistance and 300W power dissipation. Designed for through-hole mounting in a TO-220-3 package, with operating temperatures from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 22ns and fall time of 145ns.
Vishay SUP40N25-60-E3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 145ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 5nF |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.75W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 22ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SUP40N25-60-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
