N-channel power MOSFET with 200V drain-source voltage and 57A continuous drain current. Features low 33mΩ drain-source on-resistance and 4V threshold voltage. Operates from -55°C to 175°C with 300W maximum power dissipation. Packaged in a TO-220AB through-hole mount, this RoHS compliant component offers fast switching with turn-on delay of 24ns and fall time of 200ns.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Vishay SUP57N20-33-E3 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
57A
Drain to Source Resistance
33mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
33mR
Fall Time
200ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
5.1nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
3.75W
Radiation Hardening
No
Rds On Max
33mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
24ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUP57N20-33-E3 Datasheet
Download the complete datasheet for Vishay SUP57N20-33-E3 to view detailed technical specifications.
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