N-channel MOSFET with 20V drain-source voltage and 60A continuous drain current. Features low 4.5mΩ drain-to-source resistance and 120W maximum power dissipation. Operates from -55°C to 175°C, with fast switching times including 8ns fall time, 15ns turn-on delay, and 35ns turn-off delay. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers 5.95nF input capacitance.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SUP60N02-4M5P-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
60A
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
20V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
5.95nF
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
120W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
35ns
Turn-On Delay Time
15ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUP60N02-4M5P-E3 Datasheet
Download the complete datasheet for Vishay SUP60N02-4M5P-E3 to view detailed technical specifications.
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