N-channel MOSFET with 100V drain-source voltage and 60A continuous drain current. Features low 16mR drain-source on-resistance and 150W maximum power dissipation. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers fast switching with turn-on delay of 12ns and fall time of 130ns. Operates across a wide temperature range from -55°C to 175°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SUP60N10-16L-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
60A
Drain to Source Resistance
16mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
16mR
Fall Time
130ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
3.82nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
16mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
55ns
Turn-On Delay Time
12ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUP60N10-16L-E3 Datasheet
Download the complete datasheet for Vishay SUP60N10-16L-E3 to view detailed technical specifications.
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