N-channel MOSFET with 100V drain-source voltage and 60A continuous drain current. Features low 18.3mΩ drain-source on-resistance and 4.5V gate-source threshold voltage. Operates from -55°C to 175°C with 150W maximum power dissipation. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers fast switching with typical fall time of 8ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SUP60N10-18P-E3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 18.3mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 18.3mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 4.5V |
| Input Capacitance | 2.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18.3mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUP60N10-18P-E3 Datasheet
Download the complete datasheet for Vishay SUP60N10-18P-E3 to view detailed technical specifications.
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