N-channel MOSFET with 100V drain-source voltage and 60A continuous drain current. Features low 18.3mΩ drain-source on-resistance and 4.5V gate-source threshold voltage. Operates from -55°C to 175°C with 150W maximum power dissipation. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers fast switching with typical fall time of 8ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SUP60N10-18P-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
60A
Drain to Source Resistance
18.3mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
18.3mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
4.5V
Input Capacitance
2.6nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
4.5V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
18.3mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
4.5V
Turn-Off Delay Time
18ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUP60N10-18P-E3 Datasheet
Download the complete datasheet for Vishay SUP60N10-18P-E3 to view detailed technical specifications.
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