N-channel power MOSFET with 30V drain-source breakdown voltage and 75A continuous drain current. Features low 7mΩ drain-source resistance and 187W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, operating from -55°C to 175°C. Includes fast switching characteristics with a 20ns turn-on delay and 95ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power187W
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Technical Specifications
Vishay SUP75N03-04-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
75A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
7mR
Drain to Source Voltage (Vdss)
30V
Fall Time
95ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
10.742nF
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
187W
Mount
Through Hole
Package Quantity
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
187W
Radiation Hardening
No
Rds On Max
4mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
190ns
Turn-On Delay Time
20ns
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUP75N03-04-E3 Datasheet
Download the complete datasheet for Vishay SUP75N03-04-E3 to view detailed technical specifications.
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