N-channel power MOSFET with 30V drain-source breakdown voltage and 75A continuous drain current. Features low 7mΩ drain-source resistance and 187W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, operating from -55°C to 175°C. Includes fast switching characteristics with a 20ns turn-on delay and 95ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power187W
Quick Jump:
Technical Specifications
Vishay SUP75N03-04-E3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 95ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 10.742nF |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 187W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 187W |
| Radiation Hardening | No |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 190ns |
| Turn-On Delay Time | 20ns |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUP75N03-04-E3 Datasheet
Download the complete datasheet for Vishay SUP75N03-04-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.