N-channel power MOSFET featuring 75A continuous drain current and 60V drain-to-source breakdown voltage. This silicon metal-oxide semiconductor FET offers a low 8mΩ drain-to-source resistance. Designed for high-power applications, it boasts a maximum power dissipation of 250W and operates within a temperature range of -55°C to 175°C. The component is housed in a TO-220AB package and is RoHS compliant.
PackageTO-220AB
PolarityN-CHANNEL
Power250W
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Technical Specifications
Vishay SUP75N06-08-E3 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 250W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SUP |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 60V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUP75N06-08-E3 Datasheet
Download the complete datasheet for Vishay SUP75N06-08-E3 to view detailed technical specifications.
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