P-channel MOSFET with 55V drain-source voltage and 75A continuous drain current. Features low 8mΩ Rds(on) and 250W power dissipation. Operates across a wide temperature range from -55°C to 175°C. Through-hole mounting in a TO-220AB package. Includes fast switching times with turn-on delay of 13ns and fall time of 175ns.
PackageTO-220AB
MountingThrough Hole
PolarityP-CHANNEL
Power250W
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Technical Specifications
Vishay SUP75P05-08-E3 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
75A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
-55V
Fall Time
175ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
8.5nF
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Nominal Vgs
-2V
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
250W
Rds On Max
8mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2V
Turn-Off Delay Time
115ns
Turn-On Delay Time
13ns
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUP75P05-08-E3 Datasheet
Download the complete datasheet for Vishay SUP75P05-08-E3 to view detailed technical specifications.
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