N-channel MOSFET featuring 20V drain-source breakdown voltage and 85A continuous drain current. This through-hole component offers a low 3mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 250W. Operating across a wide temperature range from -55°C to 175°C, it includes a 20ns turn-on delay and 450ns turn-off delay. Packaged in TO-220AB, this RoHS compliant device is ideal for demanding applications.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power250W
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Technical Specifications
Vishay SUP85N02-03-E3 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
85A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
3mR
Drain to Source Voltage (Vdss)
20V
Fall Time
320ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
21.25nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Nominal Vgs
450mV
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
250W
Radiation Hardening
No
Rds On Max
3mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
450mV
Turn-Off Delay Time
450ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUP85N02-03-E3 Datasheet
Download the complete datasheet for Vishay SUP85N02-03-E3 to view detailed technical specifications.
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