
The SUP85N03-07P-E3 is a high-power N-channel power MOSFET from Vishay, with a continuous drain current of 85A and a drain to source breakdown voltage of 30V. It features a low drain to source resistance of 7mR and a fast switching time, with a fall time of 105ns and a turn-off delay time of 50ns. The device is rated for operation up to 175°C and is available in a package quantity of 100, packaged in rail/Tube. The SUP85N03-07P-E3 is RoHS compliant and suitable for use in high-power applications.
Vishay SUP85N03-07P-E3 technical specifications.
| Continuous Drain Current (ID) | 85A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7mR |
| Fall Time | 105ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 50ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SUP85N03-07P-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.