N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 85A continuous drain current. This through-hole component, housed in a TO-220AB package, offers a low 3.6mΩ drain-source resistance at 10V. It includes a tab for enhanced thermal performance and operates within a temperature range of -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Vishay SUP85N03-3m6P technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.51(Max)
Package Width (mm)
4.65(Max)
Package Height (mm)
9.01(Max)
Seated Plane Height (mm)
19.14(Max)
Pin Pitch (mm)
2.67(Max)
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
85A
Maximum Drain Source Resistance
3.6@10VmOhm
Typical Gate Charge @ Vgs
67@10VnC
Typical Gate Charge @ 10V
67nC
Typical Input Capacitance @ Vds
3535@15VpF
Maximum Power Dissipation
3100mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
No
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SUP85N03-3m6P Datasheet
Download the complete datasheet for Vishay SUP85N03-3m6P to view detailed technical specifications.
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