N-channel MOSFET transistor featuring 100V drain-source breakdown voltage and 85A continuous drain current. This through-hole component offers a low 10.5mΩ drain-source on-resistance and operates within a -55°C to 175°C temperature range. Packaged in TO-220-3, it boasts a maximum power dissipation of 250W and includes fast switching characteristics with a 12ns turn-on delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SUP85N10-10-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
85A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
10.5mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
10.5mR
Fall Time
130ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
6.55nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Nominal Vgs
3V
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
10.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
55ns
Turn-On Delay Time
12ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUP85N10-10-E3 Datasheet
Download the complete datasheet for Vishay SUP85N10-10-E3 to view detailed technical specifications.
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