The SUP85N10-10P-GE3 is a high-power N-channel MOSFET from Vishay, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. With a continuous drain current of 85A and a maximum power dissipation of 227W, this device is suitable for high-current applications. The TO-220-3 package provides a flange mount with a through-hole mount option, making it suitable for a variety of applications. The MOSFET is RoHS compliant and has a nominal Vgs of 3V.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SUP85N10-10P-GE3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.66nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 227W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUP85N10-10P-GE3 Datasheet
Download the complete datasheet for Vishay SUP85N10-10P-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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