
N-channel power MOSFET with 40V drain-source voltage and 90A continuous drain current. Features low 3.3mΩ drain-to-source resistance and 125W maximum power dissipation. Operates across a -55°C to 150°C temperature range, with a 1V threshold voltage and 20V gate-source voltage rating. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers fast switching with turn-on delay of 11ns and fall time of 7ns.
Vishay SUP90N04-3M3P-GE3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.286nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.211644oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SUP90N04-3M3P-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
