N-channel power MOSFET featuring 75V drain-source breakdown voltage and 90A continuous drain current. Offers ultra-low 4.8mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, with a maximum operating temperature of 175°C. Includes fast switching characteristics with 23ns turn-on and 34ns turn-off delay times.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Vishay SUP90N08-4M8P-E3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 4.8mR |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 4.8mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.46nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.75W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 4.8mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 23ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUP90N08-4M8P-E3 Datasheet
Download the complete datasheet for Vishay SUP90N08-4M8P-E3 to view detailed technical specifications.
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