N-channel power MOSFET featuring 75V drain-source breakdown voltage and 90A continuous drain current. Offers ultra-low 4.8mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, with a maximum operating temperature of 175°C. Includes fast switching characteristics with 23ns turn-on and 34ns turn-off delay times.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Vishay SUP90N08-4M8P-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
4.8mR
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
4.8mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.46nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.75W
Mount
Through Hole
Package Quantity
500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.75W
Radiation Hardening
No
Rds On Max
4.8mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
34ns
Turn-On Delay Time
23ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUP90N08-4M8P-E3 Datasheet
Download the complete datasheet for Vishay SUP90N08-4M8P-E3 to view detailed technical specifications.
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