
N-channel MOSFET with 75V drain-source breakdown voltage and 90A continuous drain current. Features low 6.8mR drain-source on-resistance and 4.62nF input capacitance. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 3.75W. Packaged in a TO-220-3 through-hole mount, this component is RoHS and REACH SVHC compliant.
Vishay SUP90N08-6M8P-E3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 6.8mR |
| Drain to Source Voltage (Vdss) | 75V |
| Dual Supply Voltage | 75V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.62nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.75W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 6.8mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 16ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SUP90N08-6M8P-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
