N-channel MOSFET with 75V drain-source breakdown voltage and 90A continuous drain current. Features low 6.8mR drain-source on-resistance and 4.62nF input capacitance. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 3.75W. Packaged in a TO-220-3 through-hole mount, this component is RoHS and REACH SVHC compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Vishay SUP90N08-6M8P-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
6.8mR
Drain to Source Voltage (Vdss)
75V
Dual Supply Voltage
75V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.62nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.75W
Mount
Through Hole
Package Quantity
50
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.75W
Radiation Hardening
No
Rds On Max
6.8mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
TrenchFET®
Termination
Through Hole
Turn-Off Delay Time
24ns
Turn-On Delay Time
16ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUP90N08-6M8P-E3 Datasheet
Download the complete datasheet for Vishay SUP90N08-6M8P-E3 to view detailed technical specifications.
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