N-channel power MOSFET featuring 100V drain-source breakdown voltage and 90A continuous drain current. Offers a low 8.8mΩ maximum drain-source on-resistance. Designed for through-hole and surface mount applications with a TO-220-3 package. Operates across a wide temperature range from -55°C to 175°C. Includes a 2.5V threshold voltage and fast switching characteristics with 23ns turn-on and 34ns turn-off delay times. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole, Surface Mount
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Vishay SUP90N10-8M8P-E3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
8.8mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
8.8mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.29nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.75W
Mount
Through Hole, Surface Mount
Package Quantity
500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.75W
Radiation Hardening
No
Rds On Max
8.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
34ns
Turn-On Delay Time
23ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUP90N10-8M8P-E3 Datasheet
Download the complete datasheet for Vishay SUP90N10-8M8P-E3 to view detailed technical specifications.
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