P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and 90A continuous drain current. This through-hole component offers a low 9.3mΩ drain-source on-resistance and operates within a -55°C to 175°C temperature range. Packaged in a TO-220AB case, it boasts a 250W power dissipation and 9.2nF input capacitance, with fast switching times including a 20ns turn-on delay.
PackageTO-220AB
MountingThrough Hole
PolarityP-CHANNEL
Power250W
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Technical Specifications
Vishay SUP90P06-09L-E3 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
9.3mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
9.3mR
Fall Time
300ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
9.2nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.4W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
250W
Radiation Hardening
No
Rds On Max
9.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
140ns
Turn-On Delay Time
20ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUP90P06-09L-E3 Datasheet
Download the complete datasheet for Vishay SUP90P06-09L-E3 to view detailed technical specifications.
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