Vishay
TN0200TS
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN
PackageSOT-23-3
PolarityN-CHANNEL
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Technical Specifications
Vishay TN0200TS technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
1.2A
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
20V
Fall Time
14ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Number of Channels
1
Package Quantity
1000
Polarity
N-CHANNEL
RoHS Compliant
No
Series
TN0
Turn-Off Delay Time
21ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay TN0200TS Datasheet
Download the complete datasheet for Vishay TN0200TS to view detailed technical specifications.
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