NPN phototransistor for surface mount applications, featuring an 860nm silicon chip with a domed, black lens and a 30° viewing angle. This component offers a 20V collector-emitter breakdown voltage and a maximum collector current of 50mA, with a power dissipation of 100mW. Designed for automotive environments and AEC-Q101 qualified, it operates between -40°C and 100°C and is supplied in tape and reel packaging.
PackageSMD/SMT
MountingSurface Mount
PolarityNPN
Power100mW
Quick Jump:
Technical Specifications
Vishay VEMT2000X01 technical specifications.
General
Package/Case
SMD/SMT
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
20V
Height
2.77mm
Lead Free
Lead Free
Length
2.3mm
Lens Color
Black
Lens Style
Domed
Max Breakdown Voltage
20V
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Quantity
6000
Packaging
Tape and Reel
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Viewing Angle
30°
Wavelength
860nm
Width
2.3mm
Compliance
RoHS
Compliant
Datasheet
Vishay VEMT2000X01 Datasheet
Download the complete datasheet for Vishay VEMT2000X01 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
