Surface mount NPN phototransistor with 850nm infrared sensitivity. Features a 70V collector-emitter breakdown voltage and 50mA maximum collector current. Operates within a -40°C to 100°C temperature range, with 100mW maximum power dissipation. Housed in a 2-pin PLCC package with a flat lens style and 120° viewing angle. RoHS compliant and suitable for automotive applications.
PackagePLCC
MountingSurface Mount
PolarityNPN
Power100mW
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Technical Specifications
Vishay VEMT4700-GS08 technical specifications.
General
Package/Case
PLCC
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Fall Time
6000ns
Height
1.75mm
Lead Free
Lead Free
Length
3.5mm
Lens Style
Flat
Max Breakdown Voltage
70V
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Quantity
7500
Packaging
Tape and Reel
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
Automotive, AEC-Q100
Viewing Angle
120°
Wavelength
850nm
Width
2.8mm
Compliance
RoHS
Compliant
Datasheet
Vishay VEMT4700-GS08 Datasheet
Download the complete datasheet for Vishay VEMT4700-GS08 to view detailed technical specifications.
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