Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Vishay VN10KM technical specifications.
| Package/Case | TO-237 |
| Continuous Drain Current (ID) | 310mA |
| Drain to Source Voltage (Vdss) | 60V |
| RoHS Compliant | No |
| RoHS | Not Compliant |
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