Unidirectional IGBT/MOSFET gate driver IC, featuring a single channel with a push-pull output. Delivers 500mA high and low level output current, with a maximum output current of 500mA. Offers a 5.3kV isolation voltage and operates within a -40°C to 110°C temperature range. Designed for through-hole mounting in a DIP package, with a propagation delay of 400ns and a fall time of 100ns. RoHS compliant and lead-free.
PackageDIP
MountingThrough Hole
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Technical Specifications
Vishay VO3150A technical specifications.
General
Package/Case
DIP
Direction
Unidirectional
Fall Time
100ns
Forward Current
25mA
High Level Output Current
500mA
Input Current
16mA
Input Type
DC
Isolation Voltage
5.3kV
Isolation Voltage-Max
5.3kV
Lead Free
Lead Free
Low Level Output Current
500mA
Max Operating Temperature
110°C
Min Operating Temperature
-40°C
Max Output Current
500mA
Max Output Voltage
500mV
Max Power Dissipation
295mW
Mount
Through Hole
Number of Channels
1
Output Type
PUSH-PULL
Output Voltage
500mV
Packaging
Rail/Tube
Propagation Delay
400ns
Pulse Width Distortion (PWD)
200ns
Reach SVHC Compliant
No
Reverse Voltage (DC)
5V
RoHS Compliant
Yes
Turn-On Delay Time
400ns
Compliance
RoHS
Compliant
Datasheet
Vishay VO3150A Datasheet
Download the complete datasheet for Vishay VO3150A to view detailed technical specifications.
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