P-channel MOSFET with 80V drain-source breakdown voltage and 3A continuous drain current. Features 5 Ohm Rds On, 6.25W max power dissipation, and 150pF input capacitance. Operates within -55°C to 150°C, with turn-on delay of 11ns and fall time of 20ns. Packaged in TO-39 for through-hole mounting.
PackageTO-39
Current Rating-280mA
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay VP0808B-E3 technical specifications.
General
Package/Case
TO-39
Continuous Drain Current (ID)
880mA
Current Rating
-280mA
Drain to Source Breakdown Voltage
-80V
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
80V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
6.6mm
Input Capacitance
150pF
Length
9.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.25W
Mount
Through Hole
Number of Channels
1
Package Quantity
100
Packaging
Bulk
Polarity
P-CHANNEL
Rds On Max
5R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Turn-Off Delay Time
20ns
Turn-On Delay Time
11ns
Width
8.15mm
Compliance
RoHS
Compliant
Datasheet
Vishay VP0808B-E3 Datasheet
Download the complete datasheet for Vishay VP0808B-E3 to view detailed technical specifications.
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