P-channel MOSFET with 80V drain-source breakdown voltage and 3A continuous drain current. Features 5 Ohm Rds On, 6.25W max power dissipation, and 150pF input capacitance. Operates within -55°C to 150°C, with turn-on delay of 11ns and fall time of 20ns. Packaged in TO-39 for through-hole mounting.
PackageTO-39
Current Rating-280mA
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay VP0808B-E3 technical specifications.
General
| Package/Case | TO-39 |
| Continuous Drain Current (ID) | 880mA |
| Current Rating | -280mA |
| Drain to Source Breakdown Voltage | -80V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.6mm |
| Input Capacitance | 150pF |
| Length | 9.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.25W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Rds On Max | 5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 11ns |
| Width | 8.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay VP0808B-E3 Datasheet
Download the complete datasheet for Vishay VP0808B-E3 to view detailed technical specifications.
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