P-channel JFET with 100V drain-to-source breakdown voltage and 790mA continuous drain current. Features 5Ω drain-to-source resistance, 20V gate-to-source voltage, and 150pF input capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 6.25W. Through-hole mounting in a TO-39 package.
PackageTO-39
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay VP1008B technical specifications.
General
| Package/Case | TO-39 |
| Continuous Drain Current (ID) | 790mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.6mm |
| Input Capacitance | 150pF |
| Lead Free | Contains Lead |
| Length | 9.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.25W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 11ns |
| Width | 8.15mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay VP1008B Datasheet
Download the complete datasheet for Vishay VP1008B to view detailed technical specifications.
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