P-channel JFET with 100V drain-to-source breakdown voltage and 790mA continuous drain current. Features 5Ω drain-to-source resistance, 20V gate-to-source voltage, and 150pF input capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 6.25W. Through-hole mounting in a TO-39 package.
PackageTO-39
MountingThrough Hole
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay VP1008B technical specifications.
General
Package/Case
TO-39
Continuous Drain Current (ID)
790mA
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
100V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
6.6mm
Input Capacitance
150pF
Lead Free
Contains Lead
Length
9.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.25W
Mount
Through Hole
Number of Channels
1
Package Quantity
100
Packaging
Bulk
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
5R
RoHS Compliant
No
Turn-Off Delay Time
20ns
Turn-On Delay Time
11ns
Width
8.15mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay VP1008B Datasheet
Download the complete datasheet for Vishay VP1008B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.