Vishay
VQ1001P
Power Field-Effect Transistor, 0.83A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, DIP-14
PackageCDIP
MountingThrough Hole
PolarityN-CHANNEL
Power1.3W
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Technical Specifications
Vishay VQ1001P technical specifications.
General
Package/Case
CDIP
Continuous Drain Current (ID)
830mA
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
1R
Drain to Source Voltage (Vdss)
30V
FET Type
4 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
110pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Through Hole
Number of Channels
4
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1.3W
Rds On Max
1.75R
RoHS Compliant
No
Weight
0.042329oz
Compliance
RoHS
Not Compliant
Datasheet
Vishay VQ1001P Datasheet
Download the complete datasheet for Vishay VQ1001P to view detailed technical specifications.
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