Vishay
VQ1001P-2
Power Field-Effect Transistor, 0.83A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
PackagePDIP
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Technical Specifications
Vishay VQ1001P-2 technical specifications.
General
Package/Case
PDIP
Continuous Drain Current (ID)
830mA
Drain to Source Voltage (Vdss)
30V
FET Type
4 N-Channel
Input Capacitance
110pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Rds On Max
1.75R
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Vishay VQ1001P-2 Datasheet
Download the complete datasheet for Vishay VQ1001P-2 to view detailed technical specifications.
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