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Technical Specifications
Vishay VQ1001P-E3 technical specifications.
General
Continuous Drain Current (ID)
830mA
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
1.75R
FET Type
4 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
110pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Through Hole
Packaging
Bulk
Radiation Hardening
No
Rds On Max
1.75R
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Vishay VQ1001P-E3 Datasheet
Download the complete datasheet for Vishay VQ1001P-E3 to view detailed technical specifications.
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