This silicon current regulator diode features a maximum operating temperature of 175°C and a maximum power dissipation of 0.5W. It has a JEDEC package code of DO-213AB and a terminal position at the end. The diode element is made of silicon and has a single element. It is designed for use in discrete semiconductor applications.
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Technical Specifications
VPT JAN1N5286UR-1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | END |
| JEDEC Package Code | DO-213AB |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | CURRENT REGULATOR DIODE |
| Power Dissipation-Max | 0.5 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | True |
Datasheet
VPT JAN1N5286UR-1 Datasheet
Download the complete datasheet for VPT JAN1N5286UR-1 to view detailed technical specifications.
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