The JAN1N5518B-1 is a unidirectional silicon zener diode with a maximum operating temperature of 175°C and a maximum power dissipation of 0.5W. It has a DO-35 package with an axial terminal position. The diode is suitable for use in high-temperature applications and has a number of terminals equal to 2. The diode element material is silicon and the diode type is a zener diode.
PolarityUNIDIRECTIONAL
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Technical Specifications
VPT JAN1N5518B-1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-35 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 0.5 |
Compliance
| REACH | Compliant |
| Military Spec | True |
Datasheet
VPT JAN1N5518B-1 Datasheet
Download the complete datasheet for VPT JAN1N5518B-1 to view detailed technical specifications.
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