This silicon current regulator diode features a power dissipation of 0.5W and is packaged in a DO-7 axial configuration. It operates over a temperature range of -65 to 175°C. The diode element is made of silicon and is a single current regulating diode. The JEDEC package code for this device is DO-7.
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Technical Specifications
VPT JANTXV1N5309-1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-7 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | CURRENT REGULATOR DIODE |
| Power Dissipation-Max | 0.5 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | True |
Datasheet
VPT JANTXV1N5309-1 Datasheet
Download the complete datasheet for VPT JANTXV1N5309-1 to view detailed technical specifications.
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