The C3M0060065D is a 650 V, 60 mΩ N-channel Silicon Carbide (SiC) MOSFET based on Wolfspeed's 3rd generation technology. It is designed to provide high blocking voltage with low on-resistance and high-speed switching with low capacitances. The device features a fast intrinsic diode with low reverse recovery charge, making it suitable for high-frequency hard-switching topologies such as Totem-Pole PFC. It offers low lead inductance, a small form factor, and low thermal impedance in a TO-247-3 package, supporting operating junction temperatures up to 175°C.
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Technical Specifications
WOLFSPEED, INC. C3M0060065D technical specifications.
General
| Drain-Source Voltage (Vds) | 650V |
| Drain-Source On-State Resistance (RDS(on)) Typ. | 60mΩ |
| Drain-Source On-State Resistance (RDS(on)) Max. | 79mΩ |
| Continuous Drain Current (Id) @ Tc=25°C | 37A |
| Power Dissipation (Pd) | 150W |
| Operating Junction Temperature (Tj) | -40 to 175°C |
| Gate-Source Voltage (Vgs) Static | -4 to +15V |
| Gate-Source Voltage (Vgs) Transient | -8 to +19V |
| Total Gate Charge (Qg) | 46nC |
| Input Capacitance (Ciss) | 1020pF |
| Reverse Recovery Charge (Qrr) | 126nC |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
| Qualification | Industrial |
Datasheet
WOLFSPEED, INC. C3M0060065D Datasheet
Download the complete datasheet for WOLFSPEED, INC. C3M0060065D to view detailed technical specifications.
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