The C3M0065090J-TR is a Gen 3 Silicon Carbide (SiC) MOSFET featuring high blocking voltage and low on-resistance. It is optimized for high-frequency operation and improved system efficiency. The device is housed in a 7-lead TO-263 package (D2PAK-7L) which includes a dedicated driver source pin to minimize gate circuit inductance and reduce switching losses. Typical applications include motor control, EV charging systems, uninterruptible power supplies (UPS), and solar inverters.
Wolfspeed, Inc. C3M0065090J-TR technical specifications.
| Drain-Source Voltage (Vdss) | 900V |
| Continuous Drain Current (Id) @ 25°C | 35A |
| Drain-Source On-State Resistance (RDS(on)) | 65mOhm |
| Total Gate Charge (Qg) | 51nC |
| Power Dissipation (Pd) @ 25°C | 113W |
| Operating Junction Temperature | -55 to 150°C |
| Input Capacitance (Ciss) | 660pF |
| Operational Gate-Source Voltage | -4 to +15V |
| RoHS | Compliant |
| REACH | Contains SVHC |
Download the complete datasheet for Wolfspeed, Inc. C3M0065090J-TR to view detailed technical specifications.
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