The C3M0065090J-TR is a Gen 3 Silicon Carbide (SiC) MOSFET featuring high blocking voltage and low on-resistance. It is optimized for high-frequency operation and improved system efficiency. The device is housed in a 7-lead TO-263 package (D2PAK-7L) which includes a dedicated driver source pin to minimize gate circuit inductance and reduce switching losses. Typical applications include motor control, EV charging systems, uninterruptible power supplies (UPS), and solar inverters.
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Technical Specifications
Wolfspeed, Inc. C3M0065090J-TR technical specifications.
General
| Drain-Source Voltage (Vdss) | 900V |
| Continuous Drain Current (Id) @ 25°C | 35A |
| Drain-Source On-State Resistance (RDS(on)) | 65mOhm |
| Total Gate Charge (Qg) | 51nC |
| Power Dissipation (Pd) @ 25°C | 113W |
| Operating Junction Temperature | -55 to 150°C |
| Input Capacitance (Ciss) | 660pF |
| Operational Gate-Source Voltage | -4 to +15V |
Compliance
| RoHS | Compliant |
| REACH | Contains SVHC |
Datasheet
Wolfspeed, Inc. C3M0065090J-TR Datasheet
Download the complete datasheet for Wolfspeed, Inc. C3M0065090J-TR to view detailed technical specifications.
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