The CAB450M12XM3 is an all-silicon carbide (SiC) half-bridge power module built on the XM3 platform. It features a 1200 V blocking voltage and a 450 A continuous current rating. Utilizing 3rd generation SiC MOSFET technology, the module provides a low on-state resistance of 2.6 mΩ and high-frequency switching capability enabled by a low-inductance 6.7 nH package design. It is designed for high reliability with a silicon nitride ceramic substrate and copper baseplate, supporting continuous operation at junction temperatures up to 175°C. Primary applications include EV chargers, traction drives, and industrial motor drives.
Wolfspeed, Inc. CAB450M12XM3 technical specifications.
| Drain-Source Voltage (VDS) | 1200V |
| Continuous Drain Current (ID) | 450A |
| Drain-Source On-state Resistance (RDS(on)) Typical | 2.6mΩ |
| Stray Inductance | 6.7nH |
| Maximum Junction Temperature (TJ) | 175°C |
| Power Dissipation (Ptot) | 850W |
| Gate-Source Voltage (VGS max) | -8/+19V |
| Configuration | Half-Bridge |
| Substrate Material | Silicon Nitride (Si3N4) |
| RoHS | Compliant with exemption 7c-I (Lead in glass or ceramic) |
| REACH | Compliant |
| ECCN | EAR99 |
No datasheet is available for this part.
