The ALD1101SA is a N-channel MOSFET with a drain to source breakdown voltage of -12V and a continuous drain current of 40mA. It has a drain to source resistance of 76 ohms and a power dissipation of 501 milliwatts. The device is packaged in a SOIC package and is not RoHS compliant. It operates over a temperature range of 0°C to 70°C.
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Advanced Linear Devices ALD1101SA technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 40mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 76R |
| Gate to Source Voltage (Vgs) | 13.2V |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Package Quantity | 50 |
| Polarity | N-CHANNEL |
| Power Dissipation | 501mW |
| RoHS Compliant | No |
| RoHS | Not Compliant |
No datasheet is available for this part.
