The ALD1117SA is a P-channel MOSFET with a drain to source breakdown voltage of -12V and a drain to source resistance of 1.8kR. It can handle a continuous drain current of -2mA and a power dissipation of 500mW. The device is packaged in a SOIC package and is not RoHS compliant. It operates within a temperature range of 0°C to 70°C.
PackageSOIC
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Advanced Linear Devices ALD1117SA technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -2mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 1.8kR |
| Gate to Source Voltage (Vgs) | -13.2V |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Package Quantity | 50 |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Advanced Linear Devices ALD1117SA Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1117SA to view detailed technical specifications.
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