The ALD1121ESAL is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 10V and a continuous drain current of 3mA. It has a power dissipation of 600mW and a gate to source voltage of 6.6V. The device is packaged in SOIC and has a maximum operating temperature of 70°C.
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Advanced Linear Devices ALD1121ESAL technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3mA |
| Drain to Source Breakdown Voltage | 10V |
| Drain to Source Resistance | 500R |
| Gate to Source Voltage (Vgs) | 6.6V |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Package Quantity | 50 |
| Polarity | N-CHANNEL |
| Power Dissipation | 600mW |
| RoHS | Compliant |
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