N-channel enhancement mode power MOSFET in a TO-220 package, featuring a 25V drain-source voltage and 85A continuous drain current. This single-element transistor offers a low 6mOhm drain-source on-resistance at 10V Vgs and a typical gate charge of 49nC at 5V Vgs. The TO-220AB package, with a 3-pin configuration and tab, supports through-hole mounting and has dimensions of 10mm (L) x 4.5mm (W) x 8.85mm (H). Maximum power dissipation is 96000mW, with an operating temperature range of -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP85L02P technical specifications.
General
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 8.85 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 25V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 85A |
| Maximum Drain Source Resistance | 6@10VmOhm |
| Typical Gate Charge @ Vgs | 49@5VnC |
| Typical Input Capacitance @ Vds | 1510@25VpF |
| Maximum Power Dissipation | 96000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Advanced Power Electronics AP85L02P Datasheet
Download the complete datasheet for Advanced Power Electronics AP85L02P to view detailed technical specifications.
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