N-channel enhancement mode power MOSFET in a TO-220 package, featuring a 25V drain-source voltage and 85A continuous drain current. This single-element transistor offers a low 6mOhm drain-source on-resistance at 10V Vgs and a typical gate charge of 49nC at 5V Vgs. The TO-220AB package, with a 3-pin configuration and tab, supports through-hole mounting and has dimensions of 10mm (L) x 4.5mm (W) x 8.85mm (H). Maximum power dissipation is 96000mW, with an operating temperature range of -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP85L02P technical specifications.
General
Package/Case
TO-220
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
8.85
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
85A
Maximum Drain Source Resistance
6@10VmOhm
Typical Gate Charge @ Vgs
49@5VnC
Typical Input Capacitance @ Vds
1510@25VpF
Maximum Power Dissipation
96000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP85L02P Datasheet
Download the complete datasheet for Advanced Power Electronics AP85L02P to view detailed technical specifications.
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